The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
May. 25, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Po Jung Lin, Hsinchu, TW;
Tzu-Yao Lin, Hsinchu, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2005.12); H01L 21/02 (2005.12);
U.S. Cl.
CPC ...
H01L 29/2003 (2012.12); H01L 21/02145 (2012.12); H01L 21/0254 (2012.12);
Abstract
A semiconductor structure includes a substrate, a first nitride layer, a second nitride layer, a third nitride layer, and a polarity inversion layer. The first nitride layer is formed on the substrate, and the polarity inversion layer formed at a surface of the first nitride layer converts a non-metallic polar surface of the first nitride layer into a metallic polar surface of the polarity inversion layer. The second nitride layer is formed on the polarity inversion layer. The third nitride layer is formed on the second nitride layer.