The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Sep. 04, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Jun Koyama, Kanagawa, JP;

Kiyoshi Kato, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2005.12); H01L 29/24 (2005.12); H01L 29/786 (2005.12); H10B 12/00 (2022.12); H10B 41/20 (2022.12); H10B 41/70 (2022.12); G11C 13/00 (2005.12); H01L 49/02 (2005.12); H10B 10/00 (2022.12);
U.S. Cl.
CPC ...
H01L 27/1225 (2012.12); H01L 27/124 (2012.12); H01L 27/1255 (2012.12); H01L 29/24 (2012.12); H01L 29/7869 (2012.12); H01L 29/78696 (2012.12); H10B 12/00 (2023.01); H10B 41/20 (2023.01); H10B 41/70 (2023.01); G11C 13/0007 (2012.12); G11C 13/003 (2012.12); G11C 2213/79 (2012.12); H01L 28/40 (2012.12); H10B 10/00 (2023.01);
Abstract

An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.


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