The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Jun. 08, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Nancy Fung, Livermore, CA (US);

Larry Gao, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2005.12); C23C 14/04 (2005.12); C23C 14/06 (2005.12); C23C 14/58 (2005.12); C23C 16/56 (2005.12); G03F 7/11 (2005.12); G03F 7/20 (2005.12); G03F 7/26 (2005.12); H01L 21/033 (2005.12); G03F 7/004 (2005.12);
U.S. Cl.
CPC ...
H01L 21/0276 (2012.12); C23C 14/042 (2012.12); C23C 14/0605 (2012.12); C23C 14/5873 (2012.12); C23C 16/56 (2012.12); G03F 7/11 (2012.12); G03F 7/2002 (2012.12); G03F 7/26 (2012.12); H01L 21/0332 (2012.12); H01L 21/0335 (2012.12); H01L 21/0337 (2012.12); H01L 21/0338 (2012.12); G03F 7/0042 (2012.12);
Abstract

Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.


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