The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Jun. 07, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Shih-Wei Peng, Hsinchu, TW;

Chia-Tien Wu, Taichung, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2005.12); H01L 21/033 (2005.12); H01L 23/58 (2005.12);
U.S. Cl.
CPC ...
H01L 21/02172 (2012.12); H01L 21/0337 (2012.12); H01L 23/585 (2012.12);
Abstract

A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell; forming a plurality of first metal strips on a first plane; forming a first trench over a boundary between the first cell and the second cell, wherein a bottom surface of the first trench is located on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall; and forming a plurality of second metal strips on a third plane over the second plane, wherein the plurality of second metal strips comprise a first second metal strip and a second second metal strip separated from each other by the separating wall.


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