The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Feb. 23, 2023
Ememory Technology Inc., Hsin-Chu, TW;
Wei-Ming Ku, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
A memory cell of a non-volatile memory includes a select transistor, a floating gate transistor, a first capacitor, a switching transistor and a second capacitor. A first drain/source terminal of the select transistor is connected with a source line. A gate terminal of the select transistor is connected with a word line. The two drain/source terminals of the floating gate transistor are respectively connected with a second drain/source terminal of the select transistor and a bit line. The first capacitor is connected between a floating gate of the floating gate transistor and an erase node. The two drain/source terminals of the switching transistor are respectively connected with the erase node and an erase line. The gate terminal of the switching transistor is connected with a control line. The second capacitor is connected between the erase node and a boost line.