The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jul. 18, 2023
Applicant:
Kokusai Electric Corporation, Tokyo, JP;
Inventor:
Kimihiko Nakatani, Toyama, JP;
Assignee:
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/36 (2005.12); C23C 16/455 (2005.12); C23C 16/56 (2005.12); H01L 21/02 (2005.12);
U.S. Cl.
CPC ...
C23C 16/45531 (2012.12); C23C 16/36 (2012.12); C23C 16/56 (2012.12); H01L 21/02126 (2012.12); H01L 21/02219 (2012.12); C23C 16/45534 (2012.12);
Abstract
There is provided a technique that includes a method for forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first precursor containing one or more Si—C bonds and not containing halogen to the substrate under a condition that at least a part of the Si—C bonds in the first precursor is held without being cut; and (b) supplying a second precursor containing one or more Si—N bonds and not containing an alkyl group to the substrate under a condition that at least a part of the Si—N bond in the second precursor is held without being cut.