The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Dec. 09, 2021
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Andreas Fischer, Castro Valley, CA (US);

Thorsten Bernd Lill, Kalaheo, HI (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2005.12); A61K 38/17 (2005.12); C09K 13/08 (2005.12); H01J 37/32 (2005.12); H01L 21/311 (2005.12);
U.S. Cl.
CPC ...
A61K 38/1716 (2012.12); C09K 13/08 (2012.12); H01J 37/32449 (2012.12); H01L 21/31122 (2012.12); H01L 21/67069 (2012.12); H01J 37/32091 (2012.12); H01J 2237/334 (2012.12);
Abstract

Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.


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