The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Dec. 14, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Shogo Mochizuki, Mechanicville, NY (US);

Juntao Li, Cohoes, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2024.12); H01L 23/528 (2005.12); H10D 30/01 (2024.12); H10D 30/67 (2024.12); H10D 64/01 (2024.12); H10D 64/23 (2024.12); H10D 84/01 (2024.12); H10D 84/03 (2024.12); H10D 84/85 (2024.12);
U.S. Cl.
CPC ...
H10D 30/797 (2024.12); H01L 23/5286 (2012.12); H10D 30/031 (2024.12); H10D 30/6713 (2024.12); H10D 30/6729 (2024.12); H10D 30/6735 (2024.12); H10D 30/6757 (2024.12); H10D 64/01 (2024.12); H10D 64/258 (2024.12); H10D 84/0167 (2024.12); H10D 84/017 (2024.12); H10D 84/0172 (2024.12); H10D 84/0186 (2024.12); H10D 84/038 (2024.12); H10D 84/85 (2024.12);
Abstract

A device comprises a first interconnect structure, a second interconnect structure, a stacked complementary transistor structure, a first contact, and a second contact. The stacked complementary transistor structure is disposed between the first and second interconnect structures. The stacked complementary transistor structure comprises a first transistor of a first type, and a second transistor of a second type which is opposite the first type. The first contact connects a first source/drain element of the first transistor to the first interconnect structure. The second contact connects a first source/drain element of the second transistor to the second interconnect structure. The first and second contacts are disposed in alignment with each other.


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