The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Jul. 24, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventor:

Shesh Mani Pandey, Saratoga Springs, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2005.12); H01L 29/66 (2005.12);
U.S. Cl.
CPC ...
H01L 29/735 (2012.12); H01L 29/6625 (2012.12);
Abstract

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure comprises a first terminal including a first raised semiconductor layer, a second terminal including a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The structure further comprises a modulator including a semiconductor layer in direct contact with the base layer. The base layer has a first conductivity type, and the semiconductor layer has a second conductivity type opposite to the first conductivity type.


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