The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Jun. 06, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chien-Heng Liu, Pingtung County, TW;
Chia-Wei Huang, Kaohsiung, TW;
Hsin-Jen Yu, Tainan, TW;
Yung-Feng Cheng, Kaohsiung, TW;
Ming-Jui Chen, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2005.12); H01L 21/762 (2005.12); H01L 29/06 (2005.12); H01L 29/78 (2005.12);
U.S. Cl.
CPC ...
H01L 29/0649 (2012.12); H01L 21/76224 (2012.12); H01L 29/66795 (2012.12); H01L 29/785 (2012.12); H01L 29/7851 (2012.12);
Abstract
A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.