The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Jan. 28, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shi-Ning Ju, Hsin Chiu, TW;

Kuo-Cheng Chiang, Zhubei, TW;

Kuan-Lun Cheng, Tainan, TW;

Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2005.12); H01L 21/762 (2005.12); H01L 21/8234 (2005.12); H01L 29/08 (2005.12); H01L 29/423 (2005.12); H01L 29/66 (2005.12); H01L 29/78 (2005.12); H01L 29/786 (2005.12);
U.S. Cl.
CPC ...
H01L 27/0886 (2012.12); H01L 21/76224 (2012.12); H01L 21/823431 (2012.12); H01L 29/0847 (2012.12); H01L 29/42392 (2012.12); H01L 29/66545 (2012.12); H01L 29/66787 (2012.12); H01L 29/785 (2012.12); H01L 29/78696 (2012.12);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures and a gate stack wrapped around the semiconductor nanostructures. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching one or more of the semiconductor nanostructures. The semiconductor device structure further includes an isolation structure continuously extending across edges of the semiconductor nanostructures.


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