The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Feb. 26, 2022
Purdue Research Foundation, West Lafayette, IN (US);
Zhihong Chen, West Lafayette, IN (US);
Chun-Li Lo, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base, wherein each of the one or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSe, TaTe, TiS, TiSe, TiTe, and TaS, and wherein x is between 1.5-1.9.