The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Oct. 20, 2021
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventors:

Harsh Narendrakumar Jain, Boise, ID (US);

Shuangqiang Luo, Boise, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2005.12); H01L 21/311 (2005.12); H01L 21/762 (2005.12); H01L 23/522 (2005.12); H01L 23/528 (2005.12); H10B 41/10 (2022.12); H10B 41/27 (2022.12); H10B 43/10 (2022.12); H10B 43/27 (2022.12);
U.S. Cl.
CPC ...
H01L 23/528 (2012.12); H01L 21/31111 (2012.12); H01L 21/76224 (2012.12); H01L 21/76802 (2012.12); H01L 21/76877 (2012.12); H01L 23/5226 (2012.12); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
Abstract

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers having channel-material strings therein. Conductive vias are formed through insulating material that is directly above the channel-material strings. Individual of the conductive vias are directly electrically coupled to individual of the channel-material strings. After forming the conductive vias, horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Intervening material is formed in the trenches laterally-between and longitudinally-along the immediately-laterally-adjacent memory-block regions. Additional methods and structures independent of method are disclosed.


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