The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Apr. 12, 2022
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventor:
Chun-Lin Lu, Hsinchu, TW;
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2005.12); H01L 21/66 (2005.12);
U.S. Cl.
CPC ...
H01L 22/32 (2012.12); H01L 23/481 (2012.12);
Abstract
A through-substrate via (TSV) test structure including a substrate, a first TSV, and a test device is provided. The substrate includes a test region. The first TSV is located in the substrate of the test region. The test device is located on the substrate of the test region. The test device and the first TSV are separated from each other. The shortest distance between the test device and the first TSV is less than 10 μm.