The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Sep. 13, 2021
Micron Technology, Inc., Boise, ID (US);
Kenji Asaki, Sagamihara, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
Apparatuses including and methods for memory subword driver circuits with reduced gate induced drain leakage are described. An example apparatus includes a first subword line and a second subword line coupled to the first subword line by a first common transistor where, in response to a test mode signal, a voltage of each of the first and second subword lines is raised to a first voltage and a gate voltage of the first common transistor is raised to a second voltage. In another example apparatus first and second subword drivers are coupled to the first and second subword lines respectively, and a driver circuit is coupled to the first and second subword drivers. The driver circuit outputs a first high signal to cause the first and second subword lines to rise to the first voltage and the gate voltage of the first common transistor to rise to the second voltage.