The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Dec. 08, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chan-Hong Chern, Palo Alto, CA (US);
Chih-Chang Lin, San Jose, CA (US);
Min-Hsiang Hsu, Hsinchu, TW;
Weiwei Song, Hsinchu, TW;
Chewn-Pu Jou, Hsinchu, TW;
Feng-Wei Kuo, Hsinchu County, TW;
Huan-Neng Chen, Taichung, TW;
Lan-Chou Cho, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.