The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Aug. 24, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Bo-Eun Park, Hwaseong-si, KR;
Jooho Lee, Hwaseong-si, KR;
Yongsung Kim, Suwon-si, KR;
Jeonggyu Song, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/56 (2005.12); C01G 27/02 (2005.12); C23C 14/08 (2005.12); C23C 14/58 (2005.12); C23C 16/40 (2005.12); C23C 16/455 (2005.12); H10B 51/00 (2022.12); H10B 53/00 (2022.12);
U.S. Cl.
CPC ...
C23C 16/56 (2012.12); C01G 27/02 (2012.12); C23C 14/08 (2012.12); C23C 14/5806 (2012.12); C23C 16/40 (2012.12); C23C 16/45525 (2012.12); H10B 51/00 (2023.01); H10B 53/00 (2023.01); C01P 2002/72 (2012.12); C01P 2002/76 (2012.12); C01P 2004/24 (2012.12); C01P 2006/40 (2012.12);
Abstract
A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfAOsatisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfAOis in a range of 0.3 to 0.5.