The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Feb. 14, 2022
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Yung-Tsun Liu, Taipei, TW;
Kuang-Wei Cheng, Hsinchu, TW;
Sung-Ju Huang, Taipei, TW;
Chih-Tsung Lee, Hsinchu, TW;
Chyi-Tsong Ni, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.