The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

May. 26, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Yuancheng Yang, Hubei, CN;

Lei Liu, Hubei, CN;

Wenxi Zhou, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H10B 41/30 (2023.02);
Abstract

A method includes disposing a layer stack on a substrate, the layer stack including a number of levels. A first control gate structure is formed in a first level of the number of levels by: forming a first opening through a dielectric layer of the first level and a sacrificial layer of the first level; removing a remaining portion of the sacrificial layer of the first level to form a first cavity; and disposing a first conductive layer in the first cavity. A second control gate structure is formed in a second level below the first level by: extending the first opening into a dielectric layer of the second level and a sacrificial layer of the second level to form a second opening; removing a remaining portion of the sacrificial layer of the second level to form a second cavity; and disposing a second conductive layer in the second cavity.


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