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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12272764 B1

PDFFull Text
Date of Patent:
Apr. 08, 2025

Filed:

Jan. 10, 2023

Advanced electronic device structures using semiconductor structures and superlattices

Applicant:

Silanna Uv Technologies Pte Ltd, Singapore, SG;

Inventors:

Petar Atanackovic, Henley Beach South, AU;

Matthew Godfrey, Sydney, AU;

Assignee:

Silanna UV Technologies Pte Ltd, Singapore, SG;

Attorney:

MLO, a professional corp.

Primary Examiner:

Telly D Green

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/14 (2010.01); H01L 33/16 (2010.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02507 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01);
Abstract

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

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