The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Mar. 04, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Hao Hou, Hsinchu, TW;
Che-Hao Chang, Hsinchu, TW;
Da-Yuan Lee, Jhubei, TW;
Chi On Chui, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/02356 (2013.01); H01L 21/31111 (2013.01); H01L 27/088 (2013.01); H01L 29/0665 (2013.01); H01L 29/401 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/78696 (2013.01);
Abstract
In an embodiment, a device includes: a first gate dielectric on a first channel region of a first semiconductor feature; a first gate electrode on the first gate dielectric; a second gate dielectric on a second channel region of a second semiconductor feature, the second gate dielectric having a greater crystallinity than the first gate dielectric; and a second gate electrode on the second gate dielectric.