IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12272553 B1

PDFFull Text
Date of Patent:
Apr. 08, 2025

Filed:

Jul. 25, 2023

Multi-layer photo etching mask including organic and inorganic materials

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Ting Ko, Kaohsiung, TW;

Tai-Chun Huang, Hsinchu, TW;

Chi On Chui, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Christine A Enad

Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/09 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); H01L 21/28088 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 27/0924 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01);
Abstract

A method includes forming an etching mask, which includes forming a bottom anti-reflective coating over a target layer, forming an inorganic middle layer over the bottom anti-reflective coating, and forming a patterned photo resist over the inorganic middle layer. The patterns of the patterned photo resist are transferred into the inorganic middle layer and the bottom anti-reflective coating to form a patterned inorganic middle layer and a patterned bottom anti-reflective coating, respectively. The patterned inorganic middle layer is then removed. The target layer is etched using the patterned bottom anti-reflective coating to define a pattern in the target layer.

Find Patent Forward Citations

Loading…