The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Dec. 27, 2022
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02126 (2013.01); C23C 16/325 (2013.01); C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45536 (2013.01); H01L 21/02208 (2013.01); H01L 21/02214 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01);
Abstract
A process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles is provided. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuously to the reaction space throughout the at least one deposition cycle. A ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than 5.