The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2025

Filed:

Mar. 19, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Devika Sil, Rensselaer, NY (US);

Ashim Dutta, Menands, NY (US);

Yann Mignot, Slingerlands, NY (US);

John Christopher Arnold, North Chatham, NY (US);

Daniel Charles Edelstein, White Plains, NY (US);

Kedari Matam, Albany, NY (US);

Cornelius Brown Peethala, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); H01L 21/3065 (2013.01);
Abstract

A novel bevel etch sequence for embedded metal contamination removal from BEOL wafers is provided. In one aspect, a method of processing a wafer includes: performing a bevel dry etch to break up layers of contaminants with embedded metals which, post back-end-of line metallization, are deposited on a bevel of the wafer, which forms a damaged layer on surfaces of the wafer, and then performing a sequence of wet etches, following the bevel dry etch, to render the bevel of the wafer substantially free of contaminants, wherein the sequence of wet etches includes etching the damaged layer to undercut and lift-off any remaining contaminants. A wafer, processed in this manner, having a bevel that is substantially free of contaminants is also provided.


Find Patent Forward Citations

Loading…