The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Mar. 09, 2023
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0038 (2013.01); G11C 13/004 (2013.01); G11C 2013/0045 (2013.01);
Abstract
A forming operation method of a resistive random access memory is provided. The method includes the following steps. A positive pulse and a negative pulse are sequentially applied, by a bit line/source line driver, to multiple resistive random access memory cells in a direction form a farthest location to a nearest location based on the bit line/source line driver through a bit line and a source line to break down a dielectric film of each of the resistive random access memory cells and generate a conductive filament of each of the resistive random access memory cells.