The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Sep. 13, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Benjamin Michael Meyer, Defiance, MO (US);
Justin Scott Kayser, Wentzville, MO (US);
John F. Valley, Lake Oswego, OR (US);
James Dean Eoff, Montgomery, MO (US);
Vandan Tanna, O'Fallon, MO (US);
William L. Luter, St. Charles, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G06T 7/00 (2017.01); G06T 7/12 (2017.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/78 (2006.01); H04N 23/56 (2023.01); G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9503 (2013.01); G06T 7/0004 (2013.01); G06T 7/12 (2017.01); H01L 21/67092 (2013.01); H01L 21/67288 (2013.01); H01L 21/78 (2013.01); H01L 22/12 (2013.01); H04N 23/56 (2023.01); G01N 2021/8812 (2013.01); G01N 2021/8887 (2013.01); G06T 2207/20056 (2013.01); G06T 2207/30148 (2013.01);
Abstract
A method of detecting defects on a semiconductor wafer includes directing diffuse light to the semiconductor wafer and reflecting the diffuse light off of the semiconductor wafer. The method further includes detecting the diffuse light with a camera to generate an image of the semiconductor wafer and analyzing the image to detect defects on the semiconductor wafer.