The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Aug. 11, 2022
Taiyuan University of Technology, Taiyuan, CN;
Institute of New Materials and Chemical Engineering, Zhejiang University, Shanxi, Taiyuan, CN;
Yuying Xi, Jinzhong, CN;
Yanxia Cui, Jinzhong, CN;
Kun Hu, Jinzhong, CN;
Yuan Tian, Jinzhong, CN;
Guohui Li, Jinzhong, CN;
Bingshe Xu, Jinzhong, CN;
Talyuan University of Technology, Taiyuan, CN;
Institute of New Materials and Chemical Engineering, Zhejiang University, Shanxi, Taiyuan, CN;
Abstract
Disclosed is a high-resistance resistor based on silicon carbide. The resistor includes a semi-insulating 4H—SiC silicon carbide substrate, a silicon surface and a carbon surface of the silicon carbide substrate are provided with symmetrical atomic-thickness aluminum oxide insulating layers, thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm, conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation, and thicknesses of the metal electrodes are 100 nm-500 nm. The present disclosure uses a high-resistance resistor based on silicon carbide that has the above structure, makes an ohmic contact electrode on a semi-insulating silicon carbide substrate, thus obtaining a resistor with a resistance of 100 TΩ or more, and satisfying requirements of the precision measurement industry.