The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Mar. 18, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Erh-Kun Lai, Longling Shiang, TW;

Hsiang-Lan Lung, Kaohsiung, TW;

Chih-Hsiang Yang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/84 (2023.02); H10B 63/24 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02);
Abstract

A memory device includes a substrate, a first conductive stripe disposed on the substrate and extending along a first direction, a second conductive stripe disposed on the first conductive stripe, a first pillar element and a spacer. The second conductive stripe extends along a second direction intersected with the first direction. A thickness of the second conductive stripe is greater than a thickness of the first conductive stripe, and the second conductive stripe is an integral structure. The first pillar element is disposed at an intersection between the first conductive stripe and the second conductive stripe, and extends from a top surface of the first conductive stripe to a bottom surface of the second conductive stripe along a third direction intersected with the first direction and the second direction. The first pillar element includes a switching layer and a memory layer corresponding to a first level.


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