The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jul. 13, 2020
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventor:
SungHae Lee, Suwon-si, KR;
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract
Methods of manufacture and memory cells manufactured according to the methods are described. The manufacture has a lower thermal budget and experiences less heating by including a blocking layer including MgO. The method of manufacture may include annealing following deposition of the MgO, with the annealing occurring at temperatures below 900° C. or below 800° C. The blocking layers may be a first blocking layer made of SiOand a second blocking layer made of MgO. The memory cells may have a CMOS Under Array (CuA) structure. The memory cells may be part of a three-dimensional NAND memory device.