The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jan. 25, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yun-Feng Kao, New Taipei, TW;
Katherine H Chiang, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A memory device having a capacitor structure and a method of forming the same are provided. The memory device includes a substrate; a dielectric layer disposed on the substrate; and a plurality of capacitor structures respectively disposed in the dielectric layer. Each capacitor structure includes: a cup-shaped lower electrode; a first upper electrode conformally covering an outer surface of the cup-shaped lower electrode; a first capacitor dielectric layer disposed between the outer surface of the cup-shaped lower electrode and the first upper electrode; a second upper electrode conformally covering an inner surface of the cup-shaped lower electrode, wherein the second upper electrode is electrically connected to the first upper electrode by at least one connection via; and a second capacitor dielectric layer disposed between the inner surface of the cup-shaped lower electrode and the second upper electrode.