The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Oct. 30, 2023
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Petar Atanackovic, Henley Beach South, AU;
Silanna UV Technologies Pte Ltd, Singapore, SG;
Abstract
Various forms of MgGeOare disclosed, where the MgGeOare epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgGeOhas a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgGeOare disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices. Also disclosed is single crystal MgGeO, with x having a value of 0≤x<1. The single crystal MgGeOmay comprise a dopant chosen from Ga, Al, Li, N. The single crystal MgGeOmay comprise a p-type conductivity.