The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Mar. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Cheng-Ting Chung, Hsinchu, TW;

Yi-Bo Liao, Hsinchu, TW;

Kuan-Lun Cheng, Hsin-chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76897 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/4175 (2013.01); H01L 29/66742 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 2029/7858 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and the fin structure includes a plurality of nanostructures stacked in a vertical direction. The semiconductor device structure includes a gate structure formed over the fin structure, and an S/D structure formed adjacent to the gate structure. The semiconductor device structure includes a first via formed adjacent to the S/D structure, and a first contact structure formed over the S/D structure. The semiconductor device structure includes a second contact structure formed below the S/D structure, and the first via is in direct contact with the first contact structure and the second contact structure.


Find Patent Forward Citations

Loading…