The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jan. 30, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yun-Yue Lin, Hsinchu, TW;
Chen-Chieh Yu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); G03F 1/64 (2012.01); H01L 21/033 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02603 (2013.01); G03F 1/64 (2013.01); H01L 21/02444 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 29/0669 (2013.01);
Abstract
A first capping layer is deposited over a substrate. A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to expose the first capping layer. The first capping layer and the second capping layer are thinned around the nanowires to form a coating on the nanowires.
Lin, Yun-Yue. (2025). Photomask pellicle including network of nanowires and method of forming the same (U.S. Patent No. 12266525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12266525
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile