The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Jul. 24, 2020
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Raymond N. Vrtis, Carlsbad, CA (US);
Robert G. Ridgeway, Chandler, AZ (US);
Xinjian Lei, Vista, CA (US);
Ming Li, San Marcos, CA (US);
Manchao Xiao, San Diego, CA (US);
Assignee:
Versum Materials US, LLC, Tempe, AZ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C09D 183/16 (2006.01); C08G 77/50 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C09D 183/16 (2013.01); C08G 77/50 (2013.01); C23C 16/308 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01);
Abstract
Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.