The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Mar. 01, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hui-Lin Wang, Taipei, TW;
Chen-Yi Weng, New Taipei, TW;
Yi-Wei Tseng, New Taipei, TW;
Chin-Yang Hsieh, Tainan, TW;
Jing-Yin Jhang, Tainan, TW;
Yi-Hui Lee, Taipei, TW;
Ying-Cheng Liu, Tainan, TW;
Yi-An Shih, Changhua County, TW;
I-Ming Tseng, Kaohsiung, TW;
Yu-Ping Wang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 5/06 (2006.01); G11C 11/16 (2006.01); H01L 29/82 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 5/06 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01L 29/82 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); G11C 2211/5615 (2013.01); H10B 61/00 (2023.02);
Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.