The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Feb. 09, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Changseok Lee, Gwacheon-si, KR;
Sangwon Kim, Seoul, KR;
Changhyun Kim, Seoul, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Eunkyu Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a vertical-channel cell array transistor structure and a dynamic random-access memory (DRAM) device including the same. The vertical-channel cell array transistor structure includes a semiconductor substrate, a plurality of channels arranged in an array on the semiconductor substrate and each extending perpendicularly from the semiconductor substrate, a gate insulating layer on the plurality of channels, a plurality of word lines on the semiconductor substrate and extending in a first direction, and a two-dimensional (2D) material layer on at least one surface of each of the plurality of word lines.