The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Apr. 19, 2022
Applicant:

Enkris Semiconductor (Wuxi), Ltd., Jiangsu, CN;

Inventors:

Weihua Liu, Jiangsu, CN;

Kai Cheng, Jiangsu, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01);
Abstract

The present disclosure provides an LED structure and a preparation method thereof. The LED structure includes: a first conductivity semiconductor layer; a stress releasing layer disposed on the first conductivity semiconductor layer, and a material of the stress releasing layer is a III-V group semiconductor material; a V-shaped layer disposed on the stress releasing layer and having V-shaped grooves, where the V-shaped grooves are formed under a control of the stress releasing layer; a multi-quantum well layer, configured to conformally cover a surface of the V-shaped layer away from the stress releasing layer; a second conductivity semiconductor layer disposed on a side of the multi-quantum well layer away from the first conductivity semiconductor layer, where a conductivity type of the second conductivity semiconductor layer is different from that of the first conductivity semiconductor layer.


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