The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
May. 10, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Chia-Chen Sun, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of first forming an active device having a gate structure and a source/drain region on a substrate, forming an interlayer dielectric (ILD) layer on the active device, removing part of the ILD layer to form a contact hole on the active device without exposing the active device and the bottom surface of the contact hole is higher than a top surface of the gate structure, and then forming a metal layer in the contact holt to form a floating contact plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile