The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Feb. 14, 2023
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Guillaume Mouret, Portet-sur-Garonne, FR;

Yann Cargouet, Portet-sur-Garonne, FR;

Thierry Michel Alain Sicard, Haute Garonne, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/267 (2013.01);
Abstract

A bandgap reference circuit includes a first current generator having first and second bipolar transistors for generating a first current that varies proportionally as a function of temperature. A second current generator includes a field effect transistor for generating a second current that varies inversely as a function of temperature. A trimming circuit includes a third bipolar transistor sized to match the first bipolar transistor, a third current generator having a second field effect transistor coupled to a collector and base of the third bipolar transistor to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current by adding the third current to or subtracting the third current from the second current based on a trim control signal. A bandgap reference current is generated by summing the first current and the modified second current.


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