The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Jul. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongkeun Oh, Seoul, KR;

Sanguk Park, Yongin-si, KR;

Gyeongcheon Jo, Hwaseong-si, KR;

Jongju Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method is provided. The method includes preparing a mask blank, the mask blank including a substrate, a reflective layer disposed on the substrate for reflecting extreme ultraviolet light, and a light absorbing layer disposed on the reflective layer; providing a photomask by forming a plurality of pattern elements having a target critical dimension from the light absorbing layer, wherein the plurality of pattern elements include a correction target pattern element to be corrected, and the correction target pattern element has a critical dimension different from the target critical dimension; identifying a correction target area of the photomask in which the correction target pattern element is disposed; applying an etchant to the photomask; and irradiating a laser beam to the correction target area while the etchant is provided on the photomask.


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