The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
May. 23, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yuan-Sheng Huang, Taichung, TW;
Shih-Chang Liu, Kaohsiung County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01);
Abstract
Depositing a side slab structure on a cladding layer before etching a supporting dielectric prevents tapering of a silicon waveguide during etching of the supporting dielectric and a substrate. For example, the side slab structure may be deposited over the silicon waveguide and the cladding layer after etching the cladding layer. As a result, when an electronic device is integrated ex situ on the substrate, wave intensity and/or total internal reflection is improved, which improves an efficiency of the electronic device.