The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Nov. 08, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Sheng Li, Hefei, CN;

Xing Jin, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01L 21/32139 (2013.01); H01L 21/76811 (2013.01); H01L 21/7682 (2013.01); H01L 21/76877 (2013.01);
Abstract

A semiconductor device and a method for forming the semiconductor device are provided. The method includes the following operations. A semiconductor substrate is provided, the semiconductor substrate includes multiple bit line structures disposed at intervals along a first direction; for each of the multiple bit line structures, surfaces of the bit line structure are filled with a conductive material to form a conductive layer covering the surfaces of the bit line structure. A top surface of the conductive layer is higher than a top surface of the bit line structure; and the conductive layer is etched to form multiple first conductive layers independent of each other and multiple second conductive layers, each of which is located on a respective one of the first conductive layers.


Find Patent Forward Citations

Li, Sheng. (2025). Semiconductor device and method for forming semiconductor device (U.S. Patent No. 12256535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12256535

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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