The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2025
Filed:
Sep. 23, 2024
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Petar Atanackovic, Henley Beach South, AU;
Silanna UV Technologies Pte Ltd, Singapore, SG;
Abstract
A multilayered semiconductor device including a substrate including n-type or p-type doped silicon carbide (SiC), an epitaxial oxide layer above the substrate, and a metal layer above the epitaxial oxide layer. In some cases, the epitaxial oxide layer includes n-type conductivity and the substrate is p-type doped, and the substrate and the epitaxial oxide layer form a p/n junction. In some cases, the device can further include an epitaxial transition layer between the substrate and the epitaxial oxide layer, where the epitaxial transition layer includes an n-type doping density that is at least an order of magnitude greater than an n-type doping density of the epitaxial oxide layer. In some cases, the substrate can be a composite substrate including a surface layer including single crystal SiC on a polycrystalline SiC layer. In some cases, a second metal layer is in contact with the substrate.