The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jun. 24, 2021
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Michael J. Seddon, Gilbert, AZ (US);

Francis J. Carney, Mesa, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/482 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/482 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/28 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 24/31 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 21/4825 (2013.01); H01L 24/03 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/03416 (2013.01); H01L 2224/03418 (2013.01); H01L 2224/03444 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0348 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05075 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13171 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16503 (2013.01); H01L 2224/16507 (2013.01); H01L 2224/17106 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29171 (2013.01); H01L 2224/29565 (2013.01); H01L 2224/29582 (2013.01); H01L 2224/29655 (2013.01); H01L 2224/29666 (2013.01); H01L 2224/3003 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/8181 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81825 (2013.01); H01L 2224/83439 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/83825 (2013.01); H01L 2224/8481 (2013.01); H01L 2224/8581 (2013.01); H01L 2224/8681 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00015 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10162 (2013.01); H01L 2924/12041 (2013.01);
Abstract

A method of forming a semiconductor package. Implementations include forming on a die backside an intermediate metal layer having multiple sublayers, each including a metal selected from the group consisting of titanium, nickel, copper, silver, and combinations thereof. A tin layer is deposited onto the intermediate metal layer and is then reflowed with a silver layer of a substrate to form an intermetallic layer having a melting temperature above 260 degrees Celsius and including an intermetallic consisting of silver and tin and/or an intermetallic consisting of copper and tin. Another method of forming a semiconductor package includes forming a bump on each of a plurality of exposed pads of a top side of a die, each exposed pad surrounded by a passivation layer, each bump including an intermediate metal layer as described above and a tin layer coupled to the intermediate metal layer is reflowed to form an intermetallic layer.


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