The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Oct. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Neng-Chieh Chang, Tainan, TW;

Po-Hao Tsai, Taoyuan, TW;

Ming-Da Cheng, Taoyuan, TW;

Wen-Hsiung Lu, Tainan, TW;

Hsu-Lun Liu, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/561 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 24/96 (2013.01); H01L 25/105 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/19 (2013.01); H01L 2224/214 (2013.01); H01L 2224/215 (2013.01); H01L 2224/24175 (2013.01); H01L 2224/821 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01);
Abstract

A semiconductor package structure includes a conductive pad formed over a substrate. The semiconductor package structure also includes a passivation layer formed over the conductive pad. The semiconductor package structure further includes a first via structure formed through the passivation layer and in contact with the conductive pad. The semiconductor package structure also includes a first encapsulating material surrounding the first via structure. The semiconductor package structure further includes a redistribution layer structure formed over the first via structure. The first via structure has a lateral extending portion embedded in the first encapsulating material near a top surface of the first via structure, and the lateral extending portion has a width increasing in a direction toward the redistribution layer structure.


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