The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jan. 15, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Liang Qiao, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); H03K 19/173 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); H03K 19/1737 (2013.01);
Abstract

A memory device includes an array of memory cells, a plurality of bit lines, a current control circuit, and a discharge enable circuit coupled between the current control circuit and a ground. The array of memory cells includes a plurality of columns of memory cells. The plurality of bit lines are respectively coupled to the plurality of columns of memory cells. First terminals of the first transistors each is in connection with one of the bit lines. Second terminals of the first transistors each is in connection with the discharge enable circuit. Third terminals of the first transistors are in connection with a reference current generator of the current control circuit.


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