The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Jan. 30, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Jiefang Deng, Hefei, CN;

Wei Chang, Hefei, CN;

Huihui Li, Hefei, CN;

Xiang Liu, Hefei, CN;

Jong Sung Jeon, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, a method of reading data from the semiconductor structure, and a method of writing data into the semiconductor structure. The semiconductor structure includes: a memory matrix, including a plurality of magnetic storage domains arranged in a staggered manner and including a first end, a second end, and an intermediate portion; and a reading and writing circuit, connected to the intermediate portion of the memory matrix and configured to write data into the magnetic storage domains and read data from the magnetic storage domains.


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