The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

Dec. 31, 2020
Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Chieh Hu, Chiayi, TW;

Chun-Chin Tu, Zhubei, TW;

Assignee:

GlobalWafers Co., Ltd, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C23C 16/45591 (2013.01); C23C 16/4585 (2013.01); C30B 25/12 (2013.01); C23C 16/45563 (2013.01); C23C 16/4588 (2013.01); C30B 25/10 (2013.01);
Abstract

A reaction apparatus includes an upper dome, a lower dome, an upper liner, a lower liner, and a preheat ring. The upper dome and the lower dome define a reaction chamber. The preheat ring is positioned within the reaction chamber for heating the process gas prior to contacting the semiconductor wafer. The preheating ring is attached to an inner circumference of the lower liner. The preheat ring includes an annular disk and an edge bar. The annular disk has an inner edge, an outer edge, a first side, and a second side opposite the first side. The inner edge and the outer edge define a radial distance therebetween. The edge bar positioned on the first side and extending from the outer edge toward the inner edge an edge bar radial thickness. The radial distance is greater than the edge bar radial thickness.


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