The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Dec. 24, 2020
Applicant:

Applied Materials Israel Ltd., Rehovot, IL;

Inventor:

Ofer Adan, Rehovot, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04Q 9/00 (2006.01); G01R 31/26 (2020.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H04Q 9/00 (2013.01); G01R 31/26 (2013.01); H01L 22/12 (2013.01);
Abstract

There is provided a method and a system configured to obtain metrology data Dinformative of a plurality of structural parameters of a semiconductor specimen, obtain a model informative of a relationship between at least some of said structural parameters and one or more electrical properties of the specimen, use the model and Dto determine, for at least one given electrical property of the specimen, one or more given structural parameters among the plurality of structural parameters, which affect the given electrical property according to an impact criterion, and generate a recipe for an examination tool, wherein the recipe enables a ratio between a first acquisition rate of data informative of the one or more given structural parameters, and a second acquisition rate of data informative of other structural parameters of the plurality of structural parameters, to meet a criterion.


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