The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
May. 16, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Linden, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A transistor includes a first gate structure, a channel layer, and source/drain contacts. The first gate structure includes metallic nanosheets. Each of the metallic nanosheets includes a top surface, a bottom surface opposite to the top surface, and sidewalls connecting the top surface and the bottom surface. The channel layer surrounds the top surfaces, the bottom surfaces, and the sidewalls of the metallic nanosheets. The source/drain contacts are electrically connected to the channel layer. A portion of the channel layer is located between the source/drain contacts and the metallic nanosheets.